Artikel

Noll, Dennis ; Hönicke, Philip ; Kayser, Yves ; Wagner, Stefan ; Beckhoff, Burkhard ; Schwalke, Udo (2018)
Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection.
In: ECS Journal of Solid State Science and Technology, 7 (7)
doi: 10.1149/2.0171807jss
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
In: ECS Transactions, 86 (15)
doi: 10.1149/08615.0013ecst
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, 86 (15)
Artikel, Bibliographie

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017)
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, 99
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016)
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Keyn, Martin ; Schwalke, Udo (2015)
Formation Process of Nickel Nano-clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors.
In: ECS Transactions, 64 (38)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015)
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, 4 (5)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, 64 (12)
Artikel, Bibliographie

Keyn, Martin ; Kramer, Andreas ; Schwalke, Udo (2014)
Dependence of Annealing Temperature on Cluster Formation during In Situ Growth of CNTs.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2014)
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2014)
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, 291
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013)
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, 44 (12)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2013)
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, 53 (1)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6)
Artikel, Bibliographie

Keyn, Martin ; Schwalke, Udo (2013)
Multi-CNTFETs for Power Device Applications: Investigation of CCVD Grown CNTs by Means of Atomic Force Microscopy.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2013)
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2013)
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, 81
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77
Artikel, Bibliographie

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo (2012)
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine (2012)
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette (2012)
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, 30 (3)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, 15 (4)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, 41 (40)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011)
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8)
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011)
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI)
Artikel, Bibliographie

Rispal, Lorraine ; Ginsel, Pia Juliane ; Schwalke, Udo (2010)
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene.
In: ECS Transactions, 33 (9)
Artikel, Bibliographie

Endres, Ralf ; Gottlob, H. D. B. ; Schmidt, M. ; Schwendt, D. ; Osten, H. J. ; Schwalke, Udo (2010)
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, 33 (3)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010)
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo (2009)
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2009)
Carbon: The Future of Nanoelectronics.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2009)
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, 27 (1)
Artikel, Bibliographie

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo (2008)
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Artikel, Bibliographie

Schwalke, Udo (2008)
Nanotechnology: The Power of Small.
In: 2nd International Conference on Signals, Circuits & Systems (SCS)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2008)
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, 29 (12)
Artikel, Bibliographie

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008)
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
In: ECS Transactions, 13 (14)
Artikel, Bibliographie

Schwalke, Udo ; Rispal, Lorraine (2008)
Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications.
In: ECS Transactions, 13 (22)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008)
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2008)
Structural and Electrical Characterization of Carbon Nanotube Field-Effect Transistors Fabricated by Novel Self-aligned Growth Method.
In: 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Endres, Ralf ; Schwalke, Udo (2008)
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC)
Artikel, Bibliographie

Schwalke, Udo (2008)
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomediccal Sensor Applications.
In: Conference Proceedings of Biodevices 2008
Artikel, Bibliographie

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008)
Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-aligned Process and Influence on Device Transfer Characteristic Hysteresis.
In: Japanese Journal of Applied Physics, 47 (4)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo (2007)
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007
Artikel, Bibliographie

Endres, Ralf ; Schwalke, Udo (2007)
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT)
Artikel, Bibliographie

Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. (2007)
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, 11 (4)
Artikel, Bibliographie

Schwalke, Udo (2007)
Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices.
In: ECS Transactions, 11 (3)
Artikel, Bibliographie

Rispal, Lorraine ; Hang, H. ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007)
Self-Aligned Fabrication Process Based on Sacrificial Catalyst for Pd-Contacted Carbon Nanotube Field-Effect Transistors.
In: ECS Transactions, 11 (8)
Artikel, Bibliographie

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo (2007)
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE)
Artikel, Bibliographie

Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard (2007)
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007
Artikel, Bibliographie

Schwalke, Udo (2007)
Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy.
In: ECS Transactions, 10 (1)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2
Artikel, Bibliographie

Schwalke, Udo (2006)
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. (2006)
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics
Artikel, Bibliographie

Barreiro, A. ; Selbmann, D. ; Pichler, T. ; Biedermann, K. ; Gemming, T. ; Rümmeli, M. H. ; Schwalke, Udo ; Büchner, B. (2006)
On the Effects of Solution and Reaction Parameters for the Aerosol-assisted CVD Growth of Long Carbon Nanotubes.
In: Applied Physics A, 82 (4)
Artikel, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, 45
Artikel, Bibliographie

Marathe, Vaibhav G. ; Stefanov, Yordan ; Schwalke, Udo ; DasGupta, Nandita (2006)
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, 504 (1-2)
Artikel, Bibliographie

Stefanov, Yordan ; Singh, Ravneet ; DasGupta, Nandita ; Misra, Pankaj ; Schwalke, Udo (2005)
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON)
Artikel, Bibliographie

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo (2005)
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan (2005)
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, 45 (5-6)
Artikel, Bibliographie

Schwalke, Udo (2005)
Gate Dielectrics: Process Integration Issues and Electrical Properties.
In: Journal of Telecommunications and Technology, 1
Artikel, Bibliographie

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004)
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts
Artikel, Bibliographie

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo (2004)
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860)
Artikel, Bibliographie

Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2004)
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST)
Artikel, Bibliographie

Nordmann, Alfred ; Schwalke, Udo (2004)
Die technische und gesellschaftliche Einbettung der Nanotechnik.
In: Thema Forschung, 2
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2004)
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, 72 (1-4)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, 94 (10)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003)
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, 50 (5)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kauerauf, T. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, 24 (2)
Artikel, Bibliographie

Schwalke, Udo (2003)
Towards Nano-CMOS Technology: Trends and Challenges.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003)
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. (2002)
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Schwalke, Udo (2001)
Progress in Device Isolation Technology.
In: Microelectronis Reliability, 41 (4)
Artikel, Bibliographie

Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin (2001)
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
In: Microelectronics Reliability, 41 (7)
Artikel, Bibliographie

Killat, Dirk ; Kluge, Johannes von ; Umbach, Frank ; Langheinrich, Werner ; Schmitz, Richard (1997)
Measurement and modelling of sensitivity and noise of MOS magnetic field effect transistors.
In: Sensors and Actuators A : Physical, 61 (1-3)
doi: 10.1016/S0924-4247(97)80286-5
Artikel, Bibliographie

Klös, A. ; Kostka, A. (1996)
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling.
In: Solid state electronics, 39 (12)
doi: 10.1016/S0038-1101(96)00122-0
Artikel, Bibliographie

Buchkapitel

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017)
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Buchkapitel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo
Hrsg.: Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (2016)
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
In: Graphene Science Handbook: Size-Dependent Properties
Buchkapitel, Bibliographie

Stefanov, Yordan ; Schwalke, Udo
Hrsg.: Li, Yuzhuo (2007)
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization
Buchkapitel, Bibliographie

Konferenzveröffentlichung

Noll, Dennis ; Schwalke, Udo (2019)
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing.
14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS). (16.04.2019-18.04.2019)
doi: 10.1109/DTIS.2019.8734953
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Noll, Dennis (2019)
Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications.
Electron Devices Technology and Manufacturing Conference (EDTM). Singapore, Singapore (12.03.2019-15.03.2019)
doi: 10.1109/EDTM.2019.8731320
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2019)
Transfer-free fabrication of nanocrystalline graphene field-effect transistor gas sensor arrays.
1&2DM 2019. Tokyo, Japan (28.01.2019-29.01.2019)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
AIMES 2018 /234th Meeting of the Electrochemical Society (ECS). Cancun, Mexico (30.09.2018-04.10.2018)
doi: 10.1149/08615.0013ecst
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018)
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Taormina, Sizilien (09.04.2018-12.04.2018)
doi: 10.1109/DTIS.2018.8368567
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS). (10.04.2018-12.04.2018)
doi: 10.1109/DTIS.2018.8368566
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Direct fabrication of nanocrystalline graphene field effect transistors for gas detection.
Workshop: Graphen und weitere 2D Materialien. Germany, Dresden (02.02.2018-02.02.2018)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
AiMES 2018 -The Americas International Meeting on Electrochemistry and Solid State Science. Cancun, Mexico (30.09.2018-04.10.2018)
doi: 10.1149/08609.0041ecst
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Hönicke, Philip ; Beckhoff, Burkhard ; Schwalke, Udo (2018)
Ammonia Sensing Using Transfer-Free in situ CCVD Grown Nanocrystalline Graphene Field Effect Transistors.
233rd Meeting of the Electrochemical Society (ECS). USA, Seattle, Washington (13.05.2018-17.05.2018)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Noll, Dennis (2018)
Transfer-free mass-fabrication of graphene field-effect gas sensors.
AN-EM 2018 13th International Conference on Advanced Nano and Energy Materials. Perth, Australia (12.12.2018-14.12.2018)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2017)
Feasibility Study of in-situ Grown Nanocrystalline Graphene for Humidity Sensing.
12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Palma de Mallorca, Spain (04.04.2017-06.04.2017)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2017)
Evaluation of Metal Catalysts for Growth of Nanocrystalline Graphene for Gas Sensing.
E-MRS 2017 Spring Meeting. Strasbourg, France (22.05.2017-26.05.2017)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016)
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Hrsg.: Schwalke, Udo ; Baumgart, Helmut ; Hahn, Horst ; Kreupl, Franz ; Lemme, Max Christian ; Li, Qiliang ; Orlowski, Marius K. ; Rotkin, Slava V. (2016)
Emerging Nanomaterials and Devices : Proceedings of a meeting ; PRiME 2016.
Emerging Nanomaterials and Devices. Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
International Conference on Micro & Nano Electronic Systems. Leipzig, Germany (21.03.2016-24.03.2016)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
PMMA-enhancement of The Lateral Growth of Transfer-free In Situ CCVD Grown Graphene.
13th International Multi-Conference on Systems, Signals & Devices (SSD). (21.03.2016-24.03.2016)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
Investigation of Transfer-free Catalytic CVD Graphene on SiO2 by Means of Conductive Atomic Force Microscopy.
11th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Istanbul, Turkey (12.04.2016-14.04.2016)
doi: 10.1109/DTIS.2016.7483899
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2015)
Computation Beyond Moore's Law: Adaptive Field-Effect Devices for Reconfigurable Logic and Hardware-Based Neural Networks.
International Conference on Computing Communication and Security 2015. Pointe aux Piments, Mauritius (04.12.2015-05.12.2015)
doi: 10.1109/CCCS.2015.7374177
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2015)
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Naples, Italy (21.04.2015-23.04.2015)
doi: 10.1109/DTIS.2015.7127387
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Schwalke, Udo (2014)
Highly Parallelized Carbon Nanotubes for Field-effect Device Applications.
226th Meeting of the Electrochemical Society (ECS). Cancún, Mexico (05.10.2014-10.10.2014)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane (2014)
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
226th Meeting of the Electrochemical Society (ECS). Cancún, Mexico (05.10.2014-10.10.2014)
Konferenzveröffentlichung, Bibliographie

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. (2014)
Graphene for Advanced Devices Applications.
SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices. Aracaju, Sergipe, Brazil (01.09.2014-05.09.2014)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT). Marrakesh, Morocco (16.12.2013-18.12.2013)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2013)
The Future of Nanoelectronics is Black: From Silicon to Hexagonal Carbon.
Africon 2013. Mauritius (09.09.2013-12.09.2013)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2013)
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
E-MRS 2013 Spring Meeting. Strasbourg, France (27.05.2012-30.05.2012)
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo (2012)
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
Junior Euromat 2012. Lausanne, Switzerland (23.07.2012-27.07.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
Graphene Week 2012. Delft, Netherlands (04.06.2012-08.06.2012)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2012)
Nanoelectronics: From Silicon to Carbon.
7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Gammarth, Tunisia (16.05.2012-18.05.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
221th Meeting of the Electrochemical Society. Seattle, WA, USA (06.05.2012-11.05.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
Spring Meeting & Exhibit 2012 of the Materials Research Society. San Francisco, CA, USA (09.04.2012-13.04.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
Graphene 2012. Brussels, Belgium (10.04.2012-13.04.2012)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine (2011)
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
12th Trends in Nanotechnology International Conference (TNT). Tenerife, Canary Islands, Spain (21.11.2011-25.11.2011)
Konferenzveröffentlichung, Bibliographie

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011)
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
ImageNano. Bilbao, Spanien (11.04.2011-14.04.2011)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Rispal, Lorraine (2010)
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
41st IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, USA (02.12.2010-04.12.2010)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2010)
Kohlenstoff: Die Zukunft der Nanoelektronik?
Inno.CNT-Jahreskongress. Marl, Deutschland (20.01.2010-20.01.2010)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2010)
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability. Erfurt, Deutschland (17.05.2010-18.05.2010)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Schwalke, Udo (2010)
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability. Erfurt, Deutschland (17.05.2010-18.05.2010)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2010)
Kohlenstoff: Die Zukunft der Nanoelektronik?
ZVEI-Fachgruppensitzung "Halbleiter Bauelemente". Hanau, Deutschland (24.02.2010-24.02.2010)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC). Arlington, VA, USA (03.12.2009-05.12.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Kohlenstoff-Nanoröhren als elektronische Bauteile für biomedizinische Sensor-Anwendungen.
6. Nanotechnologieforum Hessen. Hanau, Deutschland (26.11.2009-26.11.2009)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2009)
Carbon Nanotube Memory Devices: Mass-Fabrication and Electrical Characterization.
216th Meeting of The Electrochemical Society (ECS). Wien, Österreich (04.10.2009-09.10.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Nano-Electronics: From Top-Down to Bottom-Up?!
8th Symposium Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warschau, Polen (22.06.2009-24.06.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Yield, Reliability and Variability in the Nano-Era: Will Existing Approaches Survive?
14th IEEE European Test Symposium. Sevilla, Spanien (25.05.2009-29.05.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Damscene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
DGM Arbeitskreis "Materialien für elektronische Anwendungen". Berlin, Deutschland (20.02.2009-20.02.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Rispal, Lorraine (2008)
Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices.
214th Meeting of The Electrochemical Society (ECS). Honolulu, HI, USA (12.10.2008-17.10.2008)
Konferenzveröffentlichung, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2008)
CMOS Integration of Epitaxial Gd2O3.
15th Workshop on Dielectrics in Microelectronics (WoDiM). Bad Saarow, Deutschland (23.06.2008-25.06.2008)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2008)
Field-Effect Controlled Single-Walled Carbon Nanotube Devices for Biomedical Sensor Applications.
3rd International Conference on Smart Materials, Structures & Systems (CIMTEC). Acireale, Italien (08.06.2008-13.06.2008)
Konferenzveröffentlichung, Bibliographie

Wirbeleit, F. ; Pedrero, V. ; Thron, D. ; Stephan, R. ; Schwalke, Udo (2008)
Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon.
Material Research Society (MRS). San Francisco, CA, USA (24.03.2008-28.03.2008)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2008)
Damascene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
DPG Spring Meeting. Berlin, Deutschland (25.02.2008-29.02.2008)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Yang, Hongyu ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007)
Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors.
2007 International Conference on Solid State Devices and Materials (SSDM). Tsukuba, Japan (18.09.2007-21.09.2007)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2007)
Nanoelectronics: From Top-Down to Bottom-Up.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2007)
Fabrication-Process for CNTFETs Based on Sacrificial Catalyst: Device Characterization and Conductive-AFM Measurements.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Schwalke, Udo (2007)
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
37th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, USA (07.12.2006-09.12.2006)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006)
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST). Austin, TX, USA (27.09.2006-29.09.2006)
Konferenzveröffentlichung, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era. Warschau, Polen (25.06.2006-28.06.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006)
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
IEEE EDS Workshop on Advanced Electron Devices. Fraunhofer-Institut IMS, Duisburg, Deutschland (13.06.2006-14.06.2006)
Konferenzveröffentlichung, Bibliographie

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo (2005)
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP). Seoul, Korea (17.11.2005-19.11.2005)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo (2005)
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
International Conference on Solid State Devices and Materials (SSDM). Kobe, Japan (12.09.2005-15.09.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2005)
Carbon Nanotube Devices Integrated in the CMOS Process Using Chemical Vapour Deposition.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Schwalke, Udo (2005)
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
Nanoscale III. Santa Barbara, CA, USA (13.08.2005-16.08.2005)
Konferenzveröffentlichung, Bibliographie

Komaragiri, Rama Subrahmanyam ; Zaunert, Florian ; Schwalke, Udo (2004)
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE). Veldhoven, Niederlande (24.11.2004-25.11.2004)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Stefanov, Yordan (2004)
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
13th Workshop on Dielectrics in Microelectronics (WoDIM). Kinsale, Irland (28.06.2004-30.06.2004)
Konferenzveröffentlichung, Bibliographie

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2002)
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
IEEE Semiconductor Interface Specialist Conference. San Diego, CA, USA (05.12.2002-07.12.2002)
Konferenzveröffentlichung, Bibliographie

Dissertation

Krauss, Tillmann Adrian (2019)
Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Noll, Dennis (2019)
Nanokristalline Graphen-Feldeffekttransistoren für Gassensor-Anwendungen.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Keyn, Martin (2018)
Untersuchung einer Herstellungstechnologie für Feldeffekt-Transistoren auf Basis von Kohlenstoffnanoröhren.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Wessely, Pia Juliane (2013)
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Stefanov, Yordan (2012)
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Wessely, Frank (2011)
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Endres, Ralf (2011)
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Zaunert, Florian (2009)
Simulation und vergleichende elektrische Bewertung von planaren und 3D-MOS-Strukturen mit high-k Gate-Dielektrika.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Rispal, Lorraine (2009)
Large Scale Fabrication of Field-Effect Devices based on In Situ Grown Carbon Nanotubes.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Komaragiri, Rama Subrahmanyam (2006)
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Kerber, Andreas (2004)
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Norm, Patent, Standard

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2017)
Field effect transistor arrangement.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Field Effect Transistor Arrangement.
Norm, Patent, Standard, Bibliographie

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2013)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie