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Number of items: 6.

Jatta, Sandro ; Haberle, Klaus ; Klein, Andreas ; Schafranek, Robert ; Koegel, Benjamin ; Meissner, Peter (2009):
Depositon of Dielectric Films with Inductively Coupled Plasma-CVD in Dependence on Pressure and Two RF-Power-Sources.
In: Plasma Processes and Polymers, 6 (S1), pp. S582. ISSN 16128850,

Meissner, Peter ; Jatta, Sandro ; Haberle, Klaus ; Koegel, Benjamin ; Zogal, Karolina (2007):
Widely tuneable VCSELs.
In: Sino-German Symposium on Optical Communication Networks (SOCN), Berlin, Germany, Sept. 2007, [Conference or Workshop Item]

Meissner, Peter ; Koegel, Benjamin ; Halbritter, Hubert ; Jatta, Sandro ; Haberle, Klaus ; Maute, Markus ; Boehm, G. ; Amann, Markus-Christian ; Lackner, M. ; Schwarzott, M. ; Winter, W. (2006):
Micromechanically tuneable long wavelength VCSELs.
In: Proceedings of the Chitose International Forum on Photonics Science and Technology (CIFı7), Session I.3, Chitose, Hokkaido, Japan, Chitose, Hokkaido, Japan, November 2006. Invited,
[Conference or Workshop Item]

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo (2005):
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
International Conference on Solid State Devices and Materials (SSDM), Kobe, Japan, 12.-15.09.2005, [Conference or Workshop Item]

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23), pp. 1885-1889. [Article]

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. (2002):
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC), pp. 407-410. [Article]

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