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Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2. pp. 78-85, [Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf],
[Article]

Item Type: Article
Erschienen: 2007
Creators: Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo
Title: Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data
Language: English
Journal or Publication Title: Journal of Telecommunications and Technology
Journal volume: 2
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 28 Jun 2011 06:40
Official URL: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf
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