Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]
Item Type: | Article |
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Erschienen: | 2004 |
Creators: | Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo |
Title: | Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs |
Language: | English |
Journal or Publication Title: | Proceedings of the 3rd International Conference on Semiconductor Technology (ICST) |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Event Title: | 3rd International Conference on Semiconductor Technology (ICST) |
Event Location: | Shanghai, China |
Event Dates: | 15.-17.09.2004 |
Date Deposited: | 20 Nov 2008 08:20 |
License: | [undefiniert] |
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Suche nach Titel in: | TUfind oder in Google |
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