Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]
| Item Type: | Article |
|---|---|
| Erschienen: | 2004 |
| Creators: | Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo |
| Title: | Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs |
| Language: | English |
| Journal or Publication Title: | Proceedings of the 3rd International Conference on Semiconductor Technology (ICST) |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Event Title: | 3rd International Conference on Semiconductor Technology (ICST) |
| Event Location: | Shanghai, China |
| Event Dates: | 15.-17.09.2004 |
| Date Deposited: | 20 Nov 2008 08:20 |
| License: | [undefiniert] |
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