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Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs

Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]

Item Type: Article
Erschienen: 2004
Creators: Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo
Title: Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs
Language: English
Journal or Publication Title: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 3rd International Conference on Semiconductor Technology (ICST)
Event Location: Shanghai, China
Event Dates: 15.-17.09.2004
Date Deposited: 20 Nov 2008 08:20
License: [undefiniert]
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