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Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst

Schwalke, Udo and Rispal, Lorraine (2010):
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
In: 41st IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 02.-04.12.2010, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2010
Creators: Schwalke, Udo and Rispal, Lorraine
Title: Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 41st IEEE Semiconductor Interface Specialists Conference (SISC)
Event Location: San Diego, CA, USA
Event Dates: 02.-04.12.2010
Date Deposited: 28 Jun 2011 09:36
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