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Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2009
Creators: Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 40th IEEE Semiconductor Interface Specialists Conference (SISC)
Event Location: Arlington, VA, USA
Event Dates: 03.-05.12.2009
Date Deposited: 28 Jun 2011 14:03
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