TU Darmstadt / ULB / TUbiblio

Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2006
Creators: Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo
Title: Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST)
Event Location: Austin, TX, USA
Event Dates: 27.-29.09.2006
Date Deposited: 28 Jun 2011 05:58
Export:
Suche nach Titel in: TUfind oder in Google

Optionen (nur für Redakteure)

View Item View Item