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In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Online-Edition: http://www.mrs.org/s12-program-ee/#tab4],
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2012
Creators: Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo
Title: In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: Spring Meeting & Exhibit 2012 of the Materials Research Society
Event Location: San Francisco, CA, USA
Event Dates: 09.-13.04.2012
Date Deposited: 17 Apr 2012 06:01
Official URL: http://www.mrs.org/s12-program-ee/#tab4
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