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Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Official URL: http://prime-intl.org/
Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS)
Event Location: Honolulu, Hawaii, USA
Event Dates: 02.-07.10.2016
Date Deposited: 24 Oct 2016 08:15
Official URL: http://prime-intl.org/
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