Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]
Official URL: http://prime-intl.org/
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2016 |
| Creators: | Krauss, Tillmann and Wessely, Frank and Schwalke, Udo |
| Title: | Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications |
| Language: | English |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Event Title: | PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS) |
| Event Location: | Honolulu, Hawaii, USA |
| Event Dates: | 02.-07.10.2016 |
| Date Deposited: | 24 Oct 2016 08:15 |
| Official URL: | http://prime-intl.org/ |
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