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Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, pp. 91-96, 74, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017],
[Article]

Item Type: Article
Erschienen: 2012
Creators: Wessely, Frank and Krauss, Tillmann and Schwalke, Udo
Title: Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications
Language: English
Journal or Publication Title: Solid-State Electronics
Volume: 74
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 17 Apr 2012 07:59
Official URL: http://dx.doi.org/10.1016/j.sse.2012.04.017
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