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Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics

Schwalke, Udo and Boye, K. and Haberle, Klaus and Heller, Rudolf and Hess, Gisela and Müller, Gudrun and Ruland, Tino and Tzschöckel, Gerhard and Osten, H. J. and Fissel, A. and Müssig, H.-J. (2002):
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC), pp. 407-410, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2002.194954],
[Article]

Item Type: Article
Erschienen: 2002
Creators: Schwalke, Udo and Boye, K. and Haberle, Klaus and Heller, Rudolf and Hess, Gisela and Müller, Gudrun and Ruland, Tino and Tzschöckel, Gerhard and Osten, H. J. and Fissel, A. and Müssig, H.-J.
Title: Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics
Language: English
Journal or Publication Title: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 27 Jun 2011 13:47
Official URL: http://dx.doi.org/10.1109/ESSDERC.2002.194954
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