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Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
[Online-Edition: https://doi.org/10.1109/DTIS.2017.7930155]
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2017)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
[Online-Edition: http://prime-intl.org/]
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), 02.-07.10.2016, Honolulu, Hawaii, USA.
[Konferenz- oder Workshop-Beitrag], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13) pp. 57-63.
[Artikel], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
[Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724]
In: International Conference on Micro & Nano Electronic Systems, 21.-24.03.2016, Leipzig, Germany.
[Konferenz- oder Workshop-Beitrag], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1149/2.0021507jss]
In: ECS Journal of Solid State Science and Technology, 4 (5) Q46-Q50.
[Artikel], (2015)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...]

[Norm, Patent, Standard], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...]

[Norm, Patent, Standard], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ]
In: ECS Transactions, 64 (12) pp. 11-24.
[Artikel], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
An Electrostatically Doped Planar Device Concept.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650]
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2014)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
[Online-Edition: http://idtsymposium.org/]
In: 8th International Design and Test Symposium (IDT), 16.-18.12.2013, Marrakesh, Morocco.
[Konferenz- oder Workshop-Beitrag], (2013)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
[Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004]
In: Microelectronics Journal, 44 (12) pp. 1072-1076.
[Artikel], (2013)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
[Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst]
In: ECS Transactions, 53 (5) pp. 105-114.
[Artikel], (2013)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
[Online-Edition: http://dx.doi.org/10.1149/2.002307jss]
In: ECS Journal of Solid State Science and Technology, 2 (6) Q88-Q93.
[Artikel], (2013)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Transfer-free grown bilayer graphene transistors for digital applications.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008]
In: Solid-State Electronics, 81 pp. 86-90.
[Artikel], (2013)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
[Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258]
In: Advances in Science and Technology, 77 pp. 258-265.
[Artikel], (2012)

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo :
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
[Online-Edition: http://www.dgm.de/tagungen/?tgnr=1178&edate=27.07.2012&lg=en...]
In: Junior Euromat 2012, 23.-27.07.2012, Lausanne, Switzerland.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
[Online-Edition: http://www.graphene-week.eu/]
In: Graphene Week 2012, 04.-08.06.2012, Delft, Netherlands.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Dopant-free CMOS: A New Device Concept.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2012)

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo :
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2012)

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine :
Nanoelectronics: From Silicon to Graphene.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
[Online-Edition: http://link.aip.org/link/?ECA/1201/755]
In: 221th Meeting of the Electrochemical Society, 06.-11.05.2012, Seattle, WA, USA.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
[Online-Edition: http://dx.doi.org/10.1149/1.3700449]
In: ECS Transactions, 45 (4) pp. 23-30.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette :
Transfer-free Fabrication of Graphene Transistors.
[Online-Edition: http://dx.doi.org/10.1116/1.4711128]
In: Journal of Vacuum Science & Technology B, 30 (3) 03D114-1.
[Artikel], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017]
In: Solid-State Electronics, 74 pp. 91-96.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
[Online-Edition: http://www.mrs.org/s12-program-ee/#tab4]
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, 09.-13.04.2012, San Francisco, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
[Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...]
In: Graphene 2012, 10.-13.04.2012, Brussels, Belgium.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011]
In: Solid-State Electronics, 70 pp. 33-38.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Hysteresis of In Situ CCVD Grown Graphene Transistors.
[Online-Edition: http://dx.doi.org/10.1149/2.019204esl]
In: Electrochemical and Solid-State Letters, 15 (4) K31-K34.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
In Situ CCVD Grown Bilayer Graphene Transistor.
[Online-Edition: http://dx.doi.org/10.1149/1.3703508]
In: ECS Transactions, 41 (40) pp. 1-5.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo :
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
[Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022]
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8) pp. 1132-1135.
[Artikel], (2011)

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
[Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013]
In: Microelectronic Engineering, 88 (12) pp. 3393-3398.
[Artikel], (2011)

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine :
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
[Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...]
In: 12th Trends in Nanotechnology International Conference (TNT), 21.-25.11.2011, Tenerife, Canary Islands, Spain.
[Konferenz- oder Workshop-Beitrag], (2011)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184]
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC) pp. 263-266.
[Artikel], (2011)

Wessely, Frank :
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
[Online-Edition: urn:nbn:de:tuda-tuprints-26612]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2011)

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
[Online-Edition: http://www.imaginenano.com/]
In: ImageNano, 11.-14.04.2011, Bilbao, Spanien.
[Konferenz- oder Workshop-Beitrag], (2011)

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2011.5941438]
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2011)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI) pp. 41-42.
[Artikel], (2011)

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo :
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
[Online-Edition: http://dx.doi.org/10.1149/1.3483505]
In: ECS Transactions, 33 (4) pp. 169-173.
[Artikel], (2010)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754]
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC) pp. 356-358.
[Artikel], (2010)

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo :
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572]
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2010)

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), 03.-05.12.2009, Arlington, VA, USA.
[Konferenz- oder Workshop-Beitrag], (2009)

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209]
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
[Artikel], (2009)

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo :
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414217]
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
[Artikel], (2009)

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo :
CMP-based Gate Last High-K Integration.
[Online-Edition: http://www.stw.nl/NR/rdonlyres/678497B6-D48F-4F76-94AF-EB589...]
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) pp. 544-547.
[Artikel], (2008)

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo :
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
[Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008]
In: Microelectronic Engineering, 85 (1) pp. 15-19.
[Artikel], (2008)

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo :
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
[Online-Edition: http://www.stw.nl/NR/rdonlyres/ADD2FB2C-3AD4-4D1E-BA0A-1EAEA...]
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) pp. 478-481.
[Artikel], (2007)

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo :
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
In: European Congress on Advanced Materials and Processes (EUROMAT), 10.-13.09.2007, Nürnberg, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2007)

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo :
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
In: European Congress on Advanced Materials and Processes (EUROMAT), 10.-13.09.2007, Nürnberg, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2007)

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo :
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
[Online-Edition: http://dx.doi.org/10.1149/1.2356303]
In: ECS Transactions, 3 (2) pp. 441-448.
[Artikel], (2006)

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo :
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), 27.-29.09.2006, Austin, TX, USA.
[Konferenz- oder Workshop-Beitrag], (2006)

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo :
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
In: IEEE EDS Workshop on Advanced Electron Devices, 13.-14.06.2006, Fraunhofer-Institut IMS, Duisburg, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2006)

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo :
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
[Online-Edition: http://dx.doi.org/10.1143/JJAP.45.3672]
In: Japanese Journal of Applied Physics, 45 pp. 3672-3679.
[Artikel], (2006)

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