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Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2002):
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
In: IEEE Semiconductor Interface Specialist Conference, San Diego, CA, USA, 05.-07.12.2002, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2002
Creators: Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo
Title: Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: IEEE Semiconductor Interface Specialist Conference
Event Location: San Diego, CA, USA
Event Dates: 05.-07.12.2002
Date Deposited: 27 Jun 2011 13:52
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