Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5), pp. 528-531. [Article]
Official URL: http://dx.doi.org/10.1016/j.microrel.2007.01.018
| Item Type: | Article |
|---|---|
| Erschienen: | 2007 |
| Creators: | Endres, Ralf and Stefanov, Yordan and Schwalke, Udo |
| Title: | Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology |
| Language: | English |
| Journal or Publication Title: | Microelectronics Reliability |
| Journal volume: | 47 |
| Number: | 4-5 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Event Title: | 14th Workshop on Dielectrics in Microelectronics (WoDiM) |
| Event Location: | Santa Tecla, Italien |
| Event Dates: | 26.-28.06.2006 |
| Date Deposited: | 20 Nov 2008 08:28 |
| Official URL: | http://dx.doi.org/10.1016/j.microrel.2007.01.018 |
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