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Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, pp. 528-531, 47, (4-5), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2007.01.018],
[Article]

Item Type: Article
Erschienen: 2007
Creators: Endres, Ralf and Stefanov, Yordan and Schwalke, Udo
Title: Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology
Language: English
Journal or Publication Title: Microelectronics Reliability
Volume: 47
Number: 4-5
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 14th Workshop on Dielectrics in Microelectronics (WoDiM)
Event Location: Santa Tecla, Italien
Event Dates: 26.-28.06.2006
Date Deposited: 20 Nov 2008 08:28
Official URL: http://dx.doi.org/10.1016/j.microrel.2007.01.018
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