Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4), pp. 23-30. [Article]
Official URL: http://dx.doi.org/10.1149/1.3700449
| Item Type: | Article |
|---|---|
| Erschienen: | 2012 |
| Creators: | Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo |
| Title: | Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures |
| Language: | English |
| Journal or Publication Title: | ECS Transactions |
| Journal volume: | 45 |
| Number: | 4 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 06 Dec 2012 09:22 |
| Official URL: | http://dx.doi.org/10.1149/1.3700449 |
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