Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4), pp. 23-30. [Article]
Official URL: http://dx.doi.org/10.1149/1.3700449
Item Type: | Article |
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Erschienen: | 2012 |
Creators: | Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo |
Title: | Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures |
Language: | English |
Journal or Publication Title: | ECS Transactions |
Journal volume: | 45 |
Number: | 4 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Date Deposited: | 06 Dec 2012 09:22 |
Official URL: | http://dx.doi.org/10.1149/1.3700449 |
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