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Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, pp. 23-30, 45, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3700449],
[Article]

Item Type: Article
Erschienen: 2012
Creators: Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo
Title: Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures
Language: English
Journal or Publication Title: ECS Transactions
Volume: 45
Number: 4
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 06 Dec 2012 09:22
Official URL: http://dx.doi.org/10.1149/1.3700449
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