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Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates

Stefanov, Yordan and Komaragiri, Rama and Schwalke, Udo (2005):
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD), p. 167, [Article]

Item Type: Article
Erschienen: 2005
Creators: Stefanov, Yordan and Komaragiri, Rama and Schwalke, Udo
Title: Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates
Language: English
Journal or Publication Title: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 1st International Conference on Memory Technology and Design (ICMTD)
Event Location: Giens, Frankreich
Event Dates: 21.-24.05.2005
Date Deposited: 20 Nov 2008 08:21
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