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Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes

Kerber, Andreas and Cartier, E. and Degraeve, R. and Roussel, Ph. and Pantisano, L. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, pp. 1261-1269, 50, (5), [Online-Edition: http://dx.doi.org/10.1109/TED.2003.813486],
[Article]

Item Type: Article
Erschienen: 2003
Creators: Kerber, Andreas and Cartier, E. and Degraeve, R. and Roussel, Ph. and Pantisano, L. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo
Title: Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes
Language: English
Journal or Publication Title: IEEE Transactions on Electron Devices
Volume: 50
Number: 5
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:15
Official URL: http://dx.doi.org/10.1109/TED.2003.813486
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