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Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kauerauf, T. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, pp. 87-89, 24, (2), [Online-Edition: http://dx.doi.org/10.1109/LED.2003.808844],
[Article]

Item Type: Article
Erschienen: 2003
Creators: Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kauerauf, T. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo
Title: Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics
Language: English
Journal or Publication Title: IEEE Dlectron Device Letters
Volume: 24
Number: 2
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:18
Official URL: http://dx.doi.org/10.1109/LED.2003.808844
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