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Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition

Rispal, Lorraine and Stefanov, Yordan and Heller, Rudolf and Tzschöckel, Gerhard and Hess, Gisela and Haberle, Klaus and Schwalke, Udo (2005):
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
In: International Conference on Solid State Devices and Materials (SSDM), Kobe, Japan, 12.-15.09.2005, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2005
Creators: Rispal, Lorraine and Stefanov, Yordan and Heller, Rudolf and Tzschöckel, Gerhard and Hess, Gisela and Haberle, Klaus and Schwalke, Udo
Title: Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: International Conference on Solid State Devices and Materials (SSDM)
Event Location: Kobe, Japan
Event Dates: 12.-15.09.2005
Date Deposited: 20 Nov 2008 08:16
License: [undefiniert]
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