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Number of items: 24.

Wessely, Pia Juliane and Schwalke, Udo Aliofkhazraei, Mahmood and Ali, Nasar and Milne, William I. and Ozkan, Cengiz S. and Mitura, Stanislaw and Gervasoni, Juana L. (eds.) (2016):
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
Volume 5, In: Graphene Science Handbook: Size-Dependent Properties, CRC Press, ISBN 9781466591363,
[Book Section]

Schwalke, Udo and Wessely, Pia Juliane (2014):
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Conference or Workshop Item]

Sivieri, Victor de Bodt and Wessely, Pia Juliane and Schwalke, Udo and Agopian, Paula G. D. and Martino, João A. (2014):
Graphene for Advanced Devices Applications.
SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, Aracaju, Sergipe, Brazil, 01.-05.09.2014, [Conference or Workshop Item]

Wessely, Pia Juliane and Schwalke, Udo (2014):
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Pia Juliane and Schwalke, Udo (2014):
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, 291, pp. 83-86. [Article]

Wessely, Pia Juliane and Schwalke, Udo (2013):
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
E-MRS 2013 Spring Meeting, Strasbourg, France, 27.-30.05.2012, [Conference or Workshop Item]

Wessely, Pia Juliane and Schwalke, Udo (2013):
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, 53 (1), pp. 133-137. [Article]

Wessely, Pia Juliane (2013):
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt,
[Ph.D. Thesis]

Wessely, Pia Juliane and Schwalke, Udo (2013):
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2013):
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, 81, pp. 86-90. [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77, pp. 258-265. [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
Graphene Week 2012, Delft, Netherlands, 04.-08.06.2012, [Conference or Workshop Item]

Keyn, Martin and Wessely, Pia Juliane and Wessely, Frank and Rispal, Lorraine and Palm, Johannes and Schwalke, Udo (2012):
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3. [Article]

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Keyn, Martin and Rispal, Lorraine (2012):
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
221th Meeting of the Electrochemical Society, Seattle, WA, USA, 06.-11.05.2012, [Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4), pp. 23-30. [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo and Riedinger, Bernadette (2012):
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, 30 (3), pp. 03D114-1. [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
Graphene 2012, Brussels, Belgium, 10.-13.04.2012, [Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, 15 (4), pp. K31-K34. [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, 41 (40), pp. 1-5. [Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Beckmann, Karsten and Riedinger, Bernadette and Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8), pp. 1132-1135. [Article]

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Keyn, Martin and Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Conference or Workshop Item]

This list was generated on Sat Mar 6 01:25:13 2021 CET.