Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23), pp. 1885-1889. [Article]
Official URL: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032
| Item Type: | Article |
|---|---|
| Erschienen: | 2005 |
| Creators: | Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo |
| Title: | Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process |
| Language: | English |
| Journal or Publication Title: | Journal of Non-Crystalline Solids |
| Journal volume: | 351 |
| Number: | 21-23 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:24 |
| Official URL: | http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032 |
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