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Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Item Type: Article
Erschienen: 2005
Creators: Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo
Title: Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process
Language: English
Journal or Publication Title: Journal of Non-Crystalline Solids
Volume: 351
Number: 21-23
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:24
Official URL: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032
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