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Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K

Schwalke, Udo (2006):
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), [Article]

Item Type: Article
Erschienen: 2006
Creators: Schwalke, Udo
Title: Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K
Language: German
Journal or Publication Title: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Event Location: Veldhoven, Niederlande
Event Dates: 23.-24.11.2006
Date Deposited: 20 Nov 2008 08:26
License: [undefiniert]
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