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Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, pp. 3393-3398, 88, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013],
[Article]

Item Type: Article
Erschienen: 2011
Creators: Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties
Language: English
Journal or Publication Title: Microelectronic Engineering
Volume: 88
Number: 12
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 6th International Symposium on Advanced Gate Stack Technology (ISAGST)
Event Location: San Francisco, CA, USA
Event Dates: 23.-26.08.2009
Date Deposited: 28 Jun 2011 14:32
Official URL: http://dx.doi.org/10.1016/j.mee.2010.05.013
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