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In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, pp. 258-265, 77, [Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258],
[Article]

Item Type: Article
Erschienen: 2012
Creators: Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo
Title: In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing
Language: English
Journal or Publication Title: Advances in Science and Technology
Volume: 77
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 4th International Conference Smart Materials, Structures and Systems (CIMTEC)
Event Location: Montecatini Terme, Italy
Event Dates: 10.-14.06.2012
Date Deposited: 19 Jun 2012 06:47
Official URL: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258
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