Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77, pp. 258-265. [Article]
Official URL: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258
Item Type: | Article |
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Erschienen: | 2012 |
Creators: | Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo |
Title: | In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing |
Language: | English |
Journal or Publication Title: | Advances in Science and Technology |
Journal volume: | 77 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Event Title: | 4th International Conference Smart Materials, Structures and Systems (CIMTEC) |
Event Location: | Montecatini Terme, Italy |
Event Dates: | 10.-14.06.2012 |
Date Deposited: | 19 Jun 2012 06:47 |
Official URL: | http://dx.doi.org/10.4028/www.scientific.net/AST.77.258 |
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