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Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability

Schwalke, Udo and Pölzl, Martin and Sekinger, Thomas and Kerber, Martin (2001):
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
In: Microelectronics Reliability, pp. 1007-1010, 41, (7), [Online-Edition: http://dx.doi.org/10.1016/S0026-2714(01)00058-0],
[Article]

Item Type: Article
Erschienen: 2001
Creators: Schwalke, Udo and Pölzl, Martin and Sekinger, Thomas and Kerber, Martin
Title: Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability
Language: English
Journal or Publication Title: Microelectronics Reliability
Volume: 41
Number: 7
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 19 Nov 2008 16:28
Official URL: http://dx.doi.org/10.1016/S0026-2714(01)00058-0
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