TU Darmstadt / ULB / TUbiblio

CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), pp. 263-266, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184],
[Article]

Item Type: Article
Erschienen: 2011
Creators: Wessely, Frank and Krauss, Tillmann and Schwalke, Udo
Title: CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications
Language: English
Journal or Publication Title: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 41th European Solid-State Device Research Conference (ESSDERC)
Event Location: Helsinki, Finnland
Event Dates: 12.-16.09.2011
Date Deposited: 28 Sep 2011 06:06
Official URL: http://dx.doi.org/10.1109/ESSDERC.2011.6044184
Export:
Suche nach Titel in: TUfind oder in Google

Optionen (nur für Redakteure)

View Item View Item