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Number of items: 30.

Stefanov, Yordan (2012):
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt, [Online-Edition: urn:nbn:de:tuda-tuprints-29314],
[Ph.D. Thesis]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, pp. 15-19, 85, (1), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

Stefanov, Yordan and Schwalke, Udo
Li, Yuzhuo (ed.) (2007):
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization, Hoboken, NJ, USA, Wiley, [Book Section]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, pp. 528-531, 47, (4-5), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2007.01.018],
[Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, pp. 78-85, 2, [Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
In: 37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 07.-09.12.2006, [Conference or Workshop Item]

Rispal, Lorraine and Ruland, Tino and Stefanov, Yordan and Wessely, Frank and Schwalke, Udo (2006):
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, pp. 441-448, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356303],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, pp. 297-301, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356289],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Gottlob, H. D. B. and Echtermeyer, T. and Mollenhauer, T. and Schmidt, M. and Efavi, J. and Wahlbrink, T. and Lemme, L. M. and Kurz, H. and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo and Czernohorsky, M. and Bugiel, E. and Fissel, A. and Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics, [Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
In: 7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 25.-28.06.2006, [Conference or Workshop Item]

Rispal, Lorraine and Wessely, Frank and Stefanov, Yordan and Ruland, Tino and Schwalke, Udo (2006):
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
In: IEEE EDS Workshop on Advanced Electron Devices, Fraunhofer-Institut IMS, Duisburg, Deutschland, 13.-14.06.2006, [Conference or Workshop Item]

Rispal, Lorraine and Stefanov, Yordan and Wessely, Frank and Schwalke, Udo (2006):
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, pp. 3672-3679, 45, [Online-Edition: http://dx.doi.org/10.1143/JJAP.45.3672],
[Article]

Marathe, Vaibhav G. and Stefanov, Yordan and Schwalke, Udo and DasGupta, Nandita (2006):
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, pp. 11-14, 504, (1-2), [Online-Edition: http://dx.doi.org/10.1016/j.tsf.2005.09.019],
[Article]

Stefanov, Yordan and Cilek, F. and Endres, Ralf and Schwalke, Udo (2005):
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
In: The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP), Seoul, Korea, 17.-19.11.2005, [Conference or Workshop Item]

Stefanov, Yordan and Singh, Ravneet and DasGupta, Nandita and Misra, Pankaj and Schwalke, Udo (2005):
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON), [Article]

Rispal, Lorraine and Stefanov, Yordan and Heller, Rudolf and Tzschöckel, Gerhard and Hess, Gisela and Haberle, Klaus and Schwalke, Udo (2005):
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
In: International Conference on Solid State Devices and Materials (SSDM), Kobe, Japan, 12.-15.09.2005, [Conference or Workshop Item]

Rispal, Lorraine and Stefanov, Yordan and Schwalke, Udo (2005):
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
In: Nanoscale III, Santa Barbara, CA, USA, 13.-16.08.2005, [Conference or Workshop Item]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Stefanov, Yordan and Komaragiri, Rama and Schwalke, Udo (2005):
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD), p. 167, [Article]

Schwalke, Udo and Stefanov, Yordan (2005):
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, pp. 790-793, 45, (5-6), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2004.11.047],
[Article]

Stefanov, Yordan and Ruland, Tino and Schwalke, Udo (2004):
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004, [Article]

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Schwalke, Udo (2004):
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, [Article]

Ruland, Tino and Stefanov, Yordan and Rispal, Lorraine and Schwalke, Udo (2004):
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860), [Article]

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Schwalke, Udo (2004):
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts, p. 97, [Article]

Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]

Schwalke, Udo and Stefanov, Yordan (2004):
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
Elsevier, In: 13th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Irland, 28.-30.06.2004, [Conference or Workshop Item]

Schwalke, Udo and Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Ruland, Tino (2003):
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC), pp. 243-246, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2003.1256859],
[Article]

Komaragiri, Rama Subrahmanyam and Schwalke, Udo and Stefanov, Yordan and Ruland, Tino (2003):
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), [Article]

This list was generated on Tue Jun 25 01:35:38 2019 CEST.