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Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo :
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
[Online-Edition: https://doi.org/10.1109/DTIS.2018.8368567]
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
[Conference or Workshop Item] , (2018)

Official URL: https://doi.org/10.1109/DTIS.2018.8368567

Abstract

In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The technological cornerstones for this general-purpose FET comprise mid-gap Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type, is interchangeable during operation by applying a control-gate voltage which significantly increases the flexibility and versatility in the design of integrated circuits.

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS
Language: English
Abstract:

In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The technological cornerstones for this general-purpose FET comprise mid-gap Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type, is interchangeable during operation by applying a control-gate voltage which significantly increases the flexibility and versatility in the design of integrated circuits.

Title of Book: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Location: Taormina, Sizilien
Event Dates: 9-12 April 2018
Date Deposited: 07 Jun 2018 14:17
DOI: 10.1109/DTIS.2018.8368567
Official URL: https://doi.org/10.1109/DTIS.2018.8368567
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