TU Darmstadt / ULB / TUbiblio

Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018)
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Taormina, Sizilien (9-12 April 2018)
doi: 10.1109/DTIS.2018.8368567
Konferenzveröffentlichung, Bibliographie

Kurzbeschreibung (Abstract)

In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The technological cornerstones for this general-purpose FET comprise mid-gap Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type, is interchangeable during operation by applying a control-gate voltage which significantly increases the flexibility and versatility in the design of integrated circuits.

Typ des Eintrags: Konferenzveröffentlichung
Erschienen: 2018
Autor(en): Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo
Art des Eintrags: Bibliographie
Titel: Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS
Sprache: Englisch
Publikationsjahr: 31 Mai 2018
Buchtitel: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
Veranstaltungsort: Taormina, Sizilien
Veranstaltungsdatum: 9-12 April 2018
DOI: 10.1109/DTIS.2018.8368567
URL / URN: https://doi.org/10.1109/DTIS.2018.8368567
Kurzbeschreibung (Abstract):

In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The technological cornerstones for this general-purpose FET comprise mid-gap Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type, is interchangeable during operation by applying a control-gate voltage which significantly increases the flexibility and versatility in the design of integrated circuits.

Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Halbleitertechnik und Nanoelektronik
Hinterlegungsdatum: 07 Jun 2018 14:17
Letzte Änderung: 07 Jun 2018 14:17
PPN:
Export:
Suche nach Titel in: TUfind oder in Google
Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen