TU Darmstadt / ULB / TUbiblio

CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70, pp. 33-38. [Article]

Item Type: Article
Erschienen: 2012
Creators: Wessely, Frank and Krauss, Tillmann and Schwalke, Udo
Title: CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors
Language: English
Journal or Publication Title: Solid-State Electronics
Journal volume: 70
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 09 Jan 2012 07:28
Official URL: http://dx.doi.org/10.1016/j.sse.2011.11.011
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details