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CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, pp. 33-38, 70, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011],
[Article]

Item Type: Article
Erschienen: 2012
Creators: Wessely, Frank and Krauss, Tillmann and Schwalke, Udo
Title: CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors
Language: English
Journal or Publication Title: Solid-State Electronics
Volume: 70
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 09 Jan 2012 07:28
Official URL: http://dx.doi.org/10.1016/j.sse.2011.11.011
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