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New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon

Biethan, Jens-Peter and Kammler, Thorsten and Naumann, Andreas and Schwalke, Udo and Stephan, Rolf and Trui, Bernhard (2007):
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007, pp. 214-215, [Article]

Item Type: Article
Erschienen: 2007
Creators: Biethan, Jens-Peter and Kammler, Thorsten and Naumann, Andreas and Schwalke, Udo and Stephan, Rolf and Trui, Bernhard
Title: New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon
Language: English
Journal or Publication Title: Book of Abstracts: E-MRS Fall Meeting 2007
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: E-MRS Fall Meeting
Event Location: Warschau, Polen
Event Dates: 17.-21.09.2007
Date Deposited: 20 Nov 2008 08:26
License: [undefiniert]
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