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Gottlob, H. D. B. and Echtermeyer, T. and Mollenhauer, T. and Schmidt, M. and Efavi, J. and Wahlbrink, T. and Lemme, L. M. and Kurz, H. and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo and Czernohorsky, M. and Bugiel, E. and Fissel, A. and Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

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