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Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kauerauf, T. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, pp. 87-89, 24, (2), [Online-Edition: http://dx.doi.org/10.1109/LED.2003.808844],
[Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2002):
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
In: IEEE Semiconductor Interface Specialist Conference, San Diego, CA, USA, 05.-07.12.2002, [Conference or Workshop Item]

This list was generated on Tue Oct 15 01:14:57 2019 CEST.