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Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics

Kerber, Andreas (2004):
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-4044],
[Ph.D. Thesis]

Abstract

Aggressive scaling of Complementary Metal Oxide Semiconductor (CMOS) devices is driving SiO2 based gate dielectrics to its physical limits. Currently several alternative dielectric materials are being studied extensively as replacement for SiO2. This work mainly discusses charge trapping and the dielectric reliability of SiO2 / Al2O3 and SiO2 / HfO2 dual layer gate dielectrics. Due to the presence of transient charging / discharging effects measurement techniques down to the µs time range are being introduced.

Item Type: Ph.D. Thesis
Erschienen: 2004
Creators: Kerber, Andreas
Title: Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics
Language: English
Abstract:

Aggressive scaling of Complementary Metal Oxide Semiconductor (CMOS) devices is driving SiO2 based gate dielectrics to its physical limits. Currently several alternative dielectric materials are being studied extensively as replacement for SiO2. This work mainly discusses charge trapping and the dielectric reliability of SiO2 / Al2O3 and SiO2 / HfO2 dual layer gate dielectrics. Due to the presence of transient charging / discharging effects measurement techniques down to the µs time range are being introduced.

Place of Publication: Darmstadt, Deutschland
Publisher: Darmstädter Dissertationen
Uncontrolled Keywords: Zuverlässigkeit, Ladungseinfang, Beweglichkeit, Defektgeneration, Alternative Dielektrika, Al2O3, HfO2
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 17 Oct 2008 09:21
Official URL: urn:nbn:de:tuda-tuprints-4044
License: only the rights of use according to UrhG
Referees: Schwalke, Prof. Dr. Udo and Maes, Prof. Dr. Herman
Refereed / Verteidigung / mdl. Prüfung: 19 January 2004
Alternative keywords:
Alternative keywordsLanguage
reliability, charge trapping, mobility, defect generation, alternative dielectrics, Al2O3, HfO2English
Alternative Abstract:
Alternative abstract Language
Aufgrund der raschen Miniaturisierung von komplementären Metall Oxyd Halbleiter (CMOS) Schaltkreisen werden die physikalischen Grenzen von Dielektrika auf SiO2 Basis in naher Zukunft erreicht. Verschiedene alternative dielektrische Materialien werden derzeit intensiv als Ersatz für SiO2 untersucht. In dieser Arbeit werden vorwiegend der Ladungseinfang und die Zuverlässigkeit von SiO2 / Al2O3 and SiO2 / HfO2 Schichten diskutiert. Aufgrund transienter Lade / Entladevorgänge werden schnelle Messverfahren im µs Bereich vorgestellt.German
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