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Damascene Metal Gate Technology for Damage-Free High-k Process Integration

Endres, Ralf and Schwalke, Udo (2008):
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC), pp. 486-492, [Article]

Item Type: Article
Erschienen: 2008
Creators: Endres, Ralf and Schwalke, Udo
Title: Damascene Metal Gate Technology for Damage-Free High-k Process Integration
Language: English
Journal or Publication Title: Proceedings of the 7th International Semiconductor Technology Conference (ISTC)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 7th International Semiconductor Technology Conference (ISTC)
Event Location: Shanghai, China
Event Dates: 15.-17.03.2008
Date Deposited: 01 Jul 2011 08:29
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