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Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio

Rispal, Lorraine and Schwalke, Udo (2008):
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, pp. 1349-1352, 29, (12), [Online-Edition: http://dx.doi.org/10.1109/LED.2008.2005850],
[Article]

Item Type: Article
Erschienen: 2008
Creators: Rispal, Lorraine and Schwalke, Udo
Title: Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio
Language: English
Journal or Publication Title: IEEE Electron Device Letters
Volume: 29
Number: 12
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 29 Jun 2011 10:20
Official URL: http://dx.doi.org/10.1109/LED.2008.2005850
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