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Number of items: 4.

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, pp. 258-261, 27, (1), [Online-Edition: http://dx.doi.org/10.1116/1.3054350],
[Article]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Conference or Workshop Item]

Hurley, P. K. and Pijolat, M. and Cherkaoui, K. and O'Connor, E. and O'Connell, D. and Negara, M. A. and Lemme, M. C. and Gottlob, D. B. and Schmidt, M. and Stegmaier, K. and Schwalke, Udo and Hall, S. and Buiu, O. and Engstrom, O. and Newcomb, S. B. (2007):
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, pp. 145-156, 11, (4), [Online-Edition: http://dx.doi.org/10.1149/1.2779556],
[Article]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

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