Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2), pp. 297-301. [Article]
Official URL: http://dx.doi.org/10.1149/1.2356289
Item Type: | Article |
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Erschienen: | 2006 |
Creators: | Endres, Ralf and Stefanov, Yordan and Schwalke, Udo |
Title: | Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics |
Language: | English |
Journal or Publication Title: | ECS Transactions |
Journal volume: | 3 |
Number: | 2 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Event Title: | 210th Meeting of The Electrochemical Society |
Event Location: | Cancun, Mexico |
Event Dates: | 29.10.-03.11.2006 |
Date Deposited: | 27 Jun 2011 14:14 |
Official URL: | http://dx.doi.org/10.1149/1.2356289 |
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