Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, pp. 297-301, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356289],
[Article]
Official URL: http://dx.doi.org/10.1149/1.2356289
| Item Type: | Article |
|---|---|
| Erschienen: | 2006 |
| Creators: | Endres, Ralf and Stefanov, Yordan and Schwalke, Udo |
| Title: | Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics |
| Language: | English |
| Journal or Publication Title: | ECS Transactions |
| Volume: | 3 |
| Number: | 2 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Event Title: | 210th Meeting of The Electrochemical Society |
| Event Location: | Cancun, Mexico |
| Event Dates: | 29.10.-03.11.2006 |
| Date Deposited: | 27 Jun 2011 14:14 |
| Official URL: | http://dx.doi.org/10.1149/1.2356289 |
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