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Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, pp. 297-301, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356289],
[Article]

Item Type: Article
Erschienen: 2006
Creators: Endres, Ralf and Stefanov, Yordan and Schwalke, Udo
Title: Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics
Language: English
Journal or Publication Title: ECS Transactions
Volume: 3
Number: 2
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 210th Meeting of The Electrochemical Society
Event Location: Cancun, Mexico
Event Dates: 29.10.-03.11.2006
Date Deposited: 27 Jun 2011 14:14
Official URL: http://dx.doi.org/10.1149/1.2356289
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