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Number of items: 7.

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, pp. 258-261, 27, (1), [Online-Edition: http://dx.doi.org/10.1116/1.3054350],
[Article]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Conference or Workshop Item]

Gottlob, H. D. B. and Echtermeyer, T. and Mollenhauer, T. and Schmidt, M. and Efavi, J. and Wahlbrink, T. and Lemme, L. M. and Kurz, H. and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo and Czernohorsky, M. and Bugiel, E. and Fissel, A. and Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Facsko, S. and Dekorsy, T. and Trappe, C. and Kurz, H. and Vogt, Alexander and Hartnagel, H. L. (1999):
Formation of ordered nanoscale semiconductor dots by ion sputtering.
In: American Association for Advance of Science, pp. 1551-1553, 285, [Article]

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Koerdt, C. and Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
In: Journal of Applied Physics, American Institute of Physics, pp. 7715-7719, 83, (12), ISSN 0021-8979,
[Article]

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Kurz, H. (1998):
Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb.
In: Jahrestagung Deutsche Gesellschaft für Kristallographie <6, 1998, Karlsruhe>: Tagungsbd., [Conference or Workshop Item]

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