Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45. [Article]
Official URL: http://dx.doi.org/10.1109/RELPHY.2003.1197718
Item Type: | Article |
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Erschienen: | 2003 |
Creators: | Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo |
Title: | Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics |
Language: | English |
Journal or Publication Title: | Proceedings of the IEEE International Reliability Physics Symposium (IRPS) |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Event Title: | IEEE International Reliability Physics Symposium (IRPS) |
Event Location: | Dallas, TX, USA |
Event Dates: | 30.03.-03.04.2003 |
Date Deposited: | 19 Nov 2008 15:58 |
Official URL: | http://dx.doi.org/10.1109/RELPHY.2003.1197718 |
License: | [undefiniert] |
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Suche nach Titel in: | TUfind oder in Google |
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