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Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics

Kerber, Andreas and Cartier, E. and Pantisano, L. and Rosmeulen, M. and Degraeve, R. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45, [Online-Edition: http://dx.doi.org/10.1109/RELPHY.2003.1197718],
[Article]

Item Type: Article
Erschienen: 2003
Creators: Kerber, Andreas and Cartier, E. and Pantisano, L. and Rosmeulen, M. and Degraeve, R. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo
Title: Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics
Language: English
Journal or Publication Title: Proceedings of the IEEE International Reliability Physics Symposium (IRPS)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: IEEE International Reliability Physics Symposium (IRPS)
Event Location: Dallas, TX, USA
Event Dates: 30.03.-03.04.2003
Date Deposited: 19 Nov 2008 15:58
Official URL: http://dx.doi.org/10.1109/RELPHY.2003.1197718
License: [undefiniert]
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