Kerber, Andreas and Cartier, E. and Pantisano, L. and Rosmeulen, M. and Degraeve, R. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45, [Online-Edition: http://dx.doi.org/10.1109/RELPHY.2003.1197718],
[Article]
Official URL: http://dx.doi.org/10.1109/RELPHY.2003.1197718
| Item Type: | Article |
|---|---|
| Erschienen: | 2003 |
| Creators: | Kerber, Andreas and Cartier, E. and Pantisano, L. and Rosmeulen, M. and Degraeve, R. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo |
| Title: | Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics |
| Language: | English |
| Journal or Publication Title: | Proceedings of the IEEE International Reliability Physics Symposium (IRPS) |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Event Title: | IEEE International Reliability Physics Symposium (IRPS) |
| Event Location: | Dallas, TX, USA |
| Event Dates: | 30.03.-03.04.2003 |
| Date Deposited: | 19 Nov 2008 15:58 |
| Official URL: | http://dx.doi.org/10.1109/RELPHY.2003.1197718 |
| License: | [undefiniert] |
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