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Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45. [Article]

Item Type: Article
Erschienen: 2003
Creators: Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo
Title: Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics
Language: English
Journal or Publication Title: Proceedings of the IEEE International Reliability Physics Symposium (IRPS)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: IEEE International Reliability Physics Symposium (IRPS)
Event Location: Dallas, TX, USA
Event Dates: 30.03.-03.04.2003
Date Deposited: 19 Nov 2008 15:58
Official URL: http://dx.doi.org/10.1109/RELPHY.2003.1197718
License: [undefiniert]
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