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Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process

Zaunert, Florian and Endres, Ralf and Schwalke, Udo (2007):
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007, pp. 488-491, [Online-Edition: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...],
[Article]

Item Type: Article
Erschienen: 2007
Creators: Zaunert, Florian and Endres, Ralf and Schwalke, Udo
Title: Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process
Language: English
Journal or Publication Title: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Event Location: Veldhoven, Niederlande
Event Dates: 29.-30.11.2007
Date Deposited: 20 Nov 2008 08:26
Official URL: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...
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