Reuter, Maximilian ; Kramer, Andreas ; Krauss, Tillmann ; Pfau, Johannes ; Becker, Jurgen ; Hofmann, Klaus (2022)
Reconfiguring an RFET Based Differential Amplifier.
40th Central America and Panama Convention. Panama City, Panama (09.11.2022-12.11.2022)
doi: 10.1109/CONCAPAN48024.2022.9997726
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018)
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Taormina, Sizilien (09.04.2018-12.04.2018)
doi: 10.1109/DTIS.2018.8368567
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2017)
Field effect transistor arrangement.
Norm, Patent, Standard, Bibliographie

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017)
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, 99
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017)
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Buchkapitel, Bibliographie

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016)
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016)
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
International Conference on Micro & Nano Electronic Systems. Leipzig, Germany (21.03.2016-24.03.2016)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015)
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, 4 (5)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Field Effect Transistor Arrangement.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, 64 (12)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT). Marrakesh, Morocco (16.12.2013-18.12.2013)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013)
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, 44 (12)
Artikel, Bibliographie

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2013)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010)
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC). Arlington, VA, USA (03.12.2009-05.12.2009)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie