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Number of items: 30.

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2018):
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Taormina, Sizilien, 9-12 April 2018, DOI: 10.1109/DTIS.2018.8368567,
[Online-Edition: https://doi.org/10.1109/DTIS.2018.8368567],
[Conference or Workshop Item]

Schwalke, Udo and Krauss, Tillmann and Wessely, Frank
Prof. Schwalke, Udo (Corporate Creator) (2017):
Field effect transistor arrangement.
[Standards, patents]

Schwarz, Mike and Calvet, Laurie E. and Snyder, John P. and Krauss, Tillmann and Schwalke, Udo and Kloes, Alexander (2017):
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, pp. 1-8, 99, [Online-Edition: https://doi.org/10.1109/TED.2017.2726899],
[Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2017):
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: https://doi.org/10.1109/DTIS.2017.7930155],
[Article]

Keyn, Martin and Krauss, Tillmann and Kramer, Andreas and Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Keyn, Martin and Krauss, Tillmann and Kramer, Andreas and Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, pp. 65-71, 75, (13), [Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, pp. 57-63, 75, (13), [Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
In: International Conference on Micro & Nano Electronic Systems, Leipzig, Germany, 21.-24.03.2016, [Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q46-Q50, 4, (5), [Online-Edition: http://dx.doi.org/10.1149/2.0021507jss],
[Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...],
[Standards, patents]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...],
[Standards, patents]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, pp. 11-24, 64, (12), [Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ],
[Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650],
[Article]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
In: 8th International Design and Test Symposium (IDT), Marrakesh, Morocco, 16.-18.12.2013, [Online-Edition: http://idtsymposium.org/],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2013):
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, pp. 1072-1076, 44, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004],
[Article]

Schwalke, Udo and Krauss, Tillmann and Wessely, Frank
Prof. Schwalke, Udo (Corporate Creator) (2013):
Feldeffekttransistor-Anordnung.
[Standards, patents]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, pp. 105-114, 53, (5), [Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst],
[Article]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q88-Q93, 2, (6), [Online-Edition: http://dx.doi.org/10.1149/2.002307jss],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, pp. 91-96, 74, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, pp. 33-38, 70, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011],
[Article]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, pp. 3393-3398, 88, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), pp. 263-266, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI), pp. 41-42, [Article]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, pp. 169-173, 33, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3483505],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2010):
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC), pp. 356-358, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754],
[Article]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572],
[Article]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Conference or Workshop Item]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209],
[Article]

This list was generated on Sat Oct 12 02:00:04 2019 CEST.