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Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q46-Q50, 4, (5), [Online-Edition: http://dx.doi.org/10.1149/2.0021507jss],
[Article]

Item Type: Article
Erschienen: 2015
Creators: Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
Language: English
Journal or Publication Title: ECS Journal of Solid State Science and Technology
Volume: 4
Number: 5
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 14 Apr 2015 11:21
Official URL: http://dx.doi.org/10.1149/2.0021507jss
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