Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, 94 (10), pp. 6627-6630. [Article]
Official URL: http://dx.doi.org/10.1063/1.1621718
Item Type: | Article |
---|---|
Erschienen: | 2003 |
Creators: | Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo |
Title: | Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes |
Language: | English |
Journal or Publication Title: | Journal of Applied Physics |
Journal volume: | 94 |
Number: | 10 |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
Date Deposited: | 20 Nov 2008 08:18 |
Official URL: | http://dx.doi.org/10.1063/1.1621718 |
License: | [undefiniert] |
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Suche nach Titel in: | TUfind oder in Google |
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