Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, pp. 6627-6630, 94, (10), [Online-Edition: http://dx.doi.org/10.1063/1.1621718],
[Article]
Official URL: http://dx.doi.org/10.1063/1.1621718
| Item Type: | Article |
|---|---|
| Erschienen: | 2003 |
| Creators: | Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo |
| Title: | Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes |
| Language: | English |
| Journal or Publication Title: | Journal of Applied Physics |
| Volume: | 94 |
| Number: | 10 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 20 Nov 2008 08:18 |
| Official URL: | http://dx.doi.org/10.1063/1.1621718 |
| License: | [undefiniert] |
| Export: |
Optionen (nur für Redakteure)
 |
View Item |
Drucken
Impressum