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Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes

Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, 94 (10), pp. 6627-6630. [Article]

Item Type: Article
Erschienen: 2003
Creators: Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo
Title: Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes
Language: English
Journal or Publication Title: Journal of Applied Physics
Journal volume: 94
Number: 10
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:18
Official URL: http://dx.doi.org/10.1063/1.1621718
License: [undefiniert]
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