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Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5), pp. 105-114. [Article]

Item Type: Article
Erschienen: 2013
Creators: Schwalke, Udo and Wessely, Frank and Krauss, Tillmann
Title: Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications
Language: English
Journal or Publication Title: ECS Transactions
Journal volume: 53
Number: 5
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 223rd Meeting of the Electrochemical Society
Event Location: Toronto, Ontario, Canada
Event Dates: 12.-16.05.2013
Date Deposited: 21 May 2013 11:44
Official URL: http://dx.doi.org/10.1149/05305.0105ecst
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