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Biethan, Jens-Peter and Kammler, Thorsten and Naumann, Andreas and Schwalke, Udo and Stephan, Rolf and Trui, Bernhard (2007):
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007, pp. 214-215. [Article]

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