TU Darmstadt / ULB / TUbiblio

Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: No Grouping | Item Type | Date | Language
Number of items: 7.

Komaragiri, Rama Subrahmanyam (2006):
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-8257],
[Ph.D. Thesis]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Komaragiri, Rama Subrahmanyam and Zaunert, Florian and Schwalke, Udo (2004):
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
In: 11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Niederlande, 24.-25.11.2004, [Conference or Workshop Item]

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Schwalke, Udo (2004):
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, [Article]

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Schwalke, Udo (2004):
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts, p. 97, [Article]

Schwalke, Udo and Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Ruland, Tino (2003):
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC), pp. 243-246, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2003.1256859],
[Article]

Komaragiri, Rama Subrahmanyam and Schwalke, Udo and Stefanov, Yordan and Ruland, Tino (2003):
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), [Article]

This list was generated on Tue Oct 15 01:35:22 2019 CEST.