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In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Keyn, Martin and Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2011
Creators: Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Keyn, Martin and Rispal, Lorraine
Title: In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 12th Trends in Nanotechnology International Conference (TNT)
Event Location: Tenerife, Canary Islands, Spain
Event Dates: 21.-25.11.2011
Date Deposited: 21 Nov 2011 15:14
Official URL: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...
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