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CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q88-Q93, 2, (6), [Online-Edition: http://dx.doi.org/10.1149/2.002307jss],
[Article]

Item Type: Article
Erschienen: 2013
Creators: Schwalke, Udo and Wessely, Frank and Krauss, Tillmann
Title: CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications
Language: English
Journal or Publication Title: ECS Journal of Solid State Science and Technology
Volume: 2
Number: 6
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 223rd Meeting of the Electrochemical Society
Event Location: Toronto, Ontario, Canada
Event Dates: 12.-16.05.2013
Date Deposited: 22 May 2013 13:33
Official URL: http://dx.doi.org/10.1149/2.002307jss
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