TU Darmstadt / ULB / TUbiblio

On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices

Schwarz, Mike and Calvet, Laurie E. and Snyder, John P. and Krauss, Tillmann and Schwalke, Udo and Kloes, Alexander (2017):
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, pp. 1-8, 99, [Online-Edition: https://doi.org/10.1109/TED.2017.2726899],
[Article]

Item Type: Article
Erschienen: 2017
Creators: Schwarz, Mike and Calvet, Laurie E. and Snyder, John P. and Krauss, Tillmann and Schwalke, Udo and Kloes, Alexander
Title: On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices
Language: English
Journal or Publication Title: IEEE Transactions on Electron Devices
Volume: 99
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 01 Aug 2017 08:36
Official URL: https://doi.org/10.1109/TED.2017.2726899
Export:

Optionen (nur für Redakteure)

View Item View Item