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Number of items: 174.

Noll, Dennis and Schwalke, Udo (2019):
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, pp. 41-49, 86, (9), ISSN 1938-6737,
DOI: 10.1149/08609.0041ecst,
[Online-Edition: http://ecst.ecsdl.org/content/86/9/41.abstract?sid=1c3d40c0-...],
[Article]

Noll, Dennis and Schwalke, Udo (2019):
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing.
Mykonos, Greece, In: 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 16.-18. April 2019, DOI: 10.1109/DTIS.2019.8734953,
[Online-Edition: https://ieeexplore.ieee.org/abstract/document/8734953],
[Conference or Workshop Item]

Schwalke, Udo and Noll, Dennis (2019):
Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications.
Singapore, Singapore, In: Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 12.-15.03.2019, DOI: 10.1109/EDTM.2019.8731320,
[Online-Edition: https://ieeexplore.ieee.org/abstract/document/8731320],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2019):
Transfer-free fabrication of nanocrystalline graphene field-effect transistor gas sensor arrays.
Tokyo, Japan, In: 1&2DM 2019, Tokyo, Japan, 28.-29.01.2019, [Online-Edition: http://www.1and2dm.com/2020/],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
Cancun, Mexico, In: AIMES 2018 /234th Meeting of the Electrochemical Society (ECS), Cancun, Mexico, 30.09.-04.10.2018, DOI: 10.1149/08615.0013,
[Online-Edition: http://ecst.ecsdl.org/search?submit=yes&submit=Submit&pubdat...],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2018):
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
Cancun, Mexico, In: AIMES 2018 /234th Meeting of the Electrochemical Society (ECS), Cancun, Mexico, 30.09.-04.10.2018, DOI: 10.1149/08609.0041ecst,
[Online-Edition: http://ecst.ecsdl.org/content/86/9/41.abstract?sid=1c3d40c0-...],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2018):
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Taormina, Sizilien, 9-12 April 2018, DOI: 10.1109/DTIS.2018.8368567,
[Online-Edition: https://doi.org/10.1109/DTIS.2018.8368567],
[Conference or Workshop Item]

Noll, Dennis and Hönicke, Philip and Kayser, Yves and Wagner, Stefan and Beckhoff, Burkhard and Schwalke, Udo (2018):
Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection.
In: ECS Journal of Solid State Science and Technology, pp. Q3108-Q3113, 7, (7), ISSN 2162-8769,
DOI: 10.1149/2.0171807jss,
[Online-Edition: http://jss.ecsdl.org/content/7/7/Q3108.abstract],
[Article]

Noll, Dennis and Schwalke, Udo (2018):
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
Taormina, In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 10, 2018 - Apr 12, 2018, DOI: 10.1109/DTIS.2018.8368566,
[Online-Edition: https://ieeexplore.ieee.org/document/8368566],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2018):
Direct fabrication of nanocrystalline graphene field effect transistors for gas detection.
Germany, Dresden, In: Workshop: Graphen und weitere 2D Materialien, Germany, Dresden, 02.02.2018, [Conference or Workshop Item]

Noll, Dennis and Hönicke, Philip and Beckhoff, Burkhard and Schwalke, Udo (2018):
Ammonia Sensing Using Transfer-Free in situ CCVD Grown Nanocrystalline Graphene Field Effect Transistors.
USA, Seattle, Washington, In: 233rd Meeting of the Electrochemical Society (ECS), USA, Seattle, Washington, 13.-17.05.2018, [Online-Edition: http://ma.ecsdl.org/content/MA2018-01/10/900.abstract],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, pp. 13-21, 86, (15), ISSN 1938-6737,
[Online-Edition: http://ma.ecsdl.org/content/MA2018-02/56/2004.abstract],
[Article]

Noll, Dennis and Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
In: ECS Transactions, pp. 13-21, 86, (15), ISSN 1938-6737,
DOI: 10.1149/08615.0013,
[Online-Edition: http://ecst.ecsdl.org/search?submit=yes&submit=Submit&pubdat...],
[Article]

Schwalke, Udo and Noll, Dennis (2018):
Transfer-free mass-fabrication of graphene field-effect gas sensors.
Perth, Australia, In: AN-EM 2018 13th International Conference on Advanced Nano and Energy Materials, Perth, Australia, 12.-14.12.2018, [Conference or Workshop Item]

Schwalke, Udo and Krauss, Tillmann and Wessely, Frank
Prof. Schwalke, Udo (Corporate Creator) (2017):
Field effect transistor arrangement.
[Standards, patents]

Schwarz, Mike and Calvet, Laurie E. and Snyder, John P. and Krauss, Tillmann and Schwalke, Udo and Kloes, Alexander (2017):
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, pp. 1-8, 99, [Online-Edition: https://doi.org/10.1109/TED.2017.2726899],
[Article]

Noll, Dennis and Schwalke, Udo (2017):
Feasibility Study of in-situ Grown Nanocrystalline Graphene for Humidity Sensing.
Palma de Mallorca, Spain, In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Palma de Mallorca, Spain, 04.-06.04.2017, [Online-Edition: https://doi.org/10.1109/DTIS.2017.7930160],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2017):
Evaluation of Metal Catalysts for Growth of Nanocrystalline Graphene for Gas Sensing.
In: E-MRS 2017 Spring Meeting, Strasbourg, France, 22.-26.05.2017, [Online-Edition: http://www.european-mrs.com/meetings/2017-spring-meeting],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2017):
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: https://doi.org/10.1109/DTIS.2017.7930155],
[Article]

Schwalke, Udo and Baumgart, Helmut and Hahn, Horst and Kreupl, Franz and Lemme, Max Christian and Li, Qiliang and Orlowski, Marius K. and Rotkin, Slava V. (eds.) (2016):
Emerging Nanomaterials and Devices.
Honolulu, Hawaii, USA, ECS Transactions (Volume 75, Issue 13), [Online-Edition: http://ecst.ecsdl.org/content/75/13],
[Journal]

Noll, Dennis and Schwalke, Udo (2016):
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Keyn, Martin and Krauss, Tillmann and Kramer, Andreas and Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2016):
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: ECS Transactions, pp. 11-16, 75, (13), [Article]

Keyn, Martin and Krauss, Tillmann and Kramer, Andreas and Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, pp. 65-71, 75, (13), [Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, pp. 57-63, 75, (13), [Article]

Wessely, Pia Juliane and Schwalke, Udo
Aliofkhazraei, Mahmood and Ali, Nasar and Milne, William I. and Ozkan, Cengiz S. and Mitura, Stanislaw and Gervasoni, Juana L. (eds.) (2016):
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
In: Graphene Science Handbook: Size-Dependent Properties, CRC Press, [Online-Edition: https://www.crcpress.com/Graphene-Science-Handbook-Size-Depe...],
[Book Section]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
In: International Conference on Micro & Nano Electronic Systems, Leipzig, Germany, 21.-24.03.2016, [Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2016):
PMMA-enhancement of The Lateral Growth of Transfer-free In Situ CCVD Grown Graphene.
Leipzig, Germany, In: 13th International Multi-Conference on Systems, Signals & Devices (SSD), 21.-24.03.2016, [Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473696],
[Conference or Workshop Item]

Noll, Dennis and Schwalke, Udo (2016):
Investigation of Transfer-free Catalytic CVD Graphene on SiO2 by Means of Conductive Atomic Force Microscopy.
Istanbul, Turkey, In: 11th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Istanbul, Turkey, 12.-14.04.2016, DOI: 10.1109/DTIS.2016.7483899,
[Online-Edition: https://ieeexplore.ieee.org/document/7483899],
[Conference or Workshop Item]

Schwalke, Udo (2015):
Computation Beyond Moore's Law: Adaptive Field-Effect Devices for Reconfigurable Logic and Hardware-Based Neural Networks.
In: International Conference on Computing Communication and Security 2015, [Online-Edition: http://dx.doi.org/10.1109/CCCS.2015.7374177],
[Article]

Keyn, Martin and Schwalke, Udo (2015):
Formation Process of Nickel Nano-clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors.
In: ECS Transactions, pp. 1-11, 64, (38), [Online-Edition: http://dx.doi.org/10.1149/06438.0001ecst],
[Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q46-Q50, 4, (5), [Online-Edition: http://dx.doi.org/10.1149/2.0021507jss],
[Article]

Noll, Dennis and Schwalke, Udo (2015):
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
Naples, Italy, In: 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Naples, Italy, 21.-23.04.2015, DOI: 10.1109/DTIS.2015.7127387,
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...],
[Standards, patents]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...],
[Standards, patents]

Keyn, Martin and Schwalke, Udo (2014):
Highly Parallelized Carbon Nanotubes for Field-effect Device Applications.
In: 226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Online-Edition: https://www.electrochem.org/meetings/biannual/226/],
[Conference or Workshop Item]

Schwalke, Udo and Wessely, Pia Juliane (2014):
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Online-Edition: https://www.electrochem.org/meetings/biannual/226/],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, pp. 11-24, 64, (12), [Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ],
[Article]

Sivieri, Victor de Bodt and Wessely, Pia Juliane and Schwalke, Udo and Agopian, Paula G. D. and Martino, João A. (2014):
Graphene for Advanced Devices Applications.
In: SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, Aracaju, Sergipe, Brazil, 01.-05.09.2014, [Online-Edition: http://www.chip-in-aracaju.ufs.br/sbmicro.php],
[Conference or Workshop Item]

Wessely, Pia Juliane and Schwalke, Udo (2014):
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850651],
[Article]

Keyn, Martin and Kramer, Andreas and Schwalke, Udo (2014):
Dependence of Annealing Temperature on Cluster Formation during In Situ Growth of CNTs.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850652],
[Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650],
[Article]

Wessely, Pia Juliane and Schwalke, Udo (2014):
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, pp. 83-86, 291, [Online-Edition: http://dx.doi.org/10.1016/j.apsusc.2013.09.142],
[Article]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
In: 8th International Design and Test Symposium (IDT), Marrakesh, Morocco, 16.-18.12.2013, [Online-Edition: http://idtsymposium.org/],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2013):
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, pp. 1072-1076, 44, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004],
[Article]

Schwalke, Udo (2013):
The Future of Nanoelectronics is Black: From Silicon to Hexagonal Carbon.
In: Africon 2013, Mauritius, 09.-12.09.2013, [Online-Edition: http://africon2013.org/],
[Conference or Workshop Item]

Schwalke, Udo and Krauss, Tillmann and Wessely, Frank
Prof. Schwalke, Udo (Corporate Creator) (2013):
Feldeffekttransistor-Anordnung.
[Standards, patents]

Wessely, Pia Juliane and Schwalke, Udo (2013):
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
In: E-MRS 2013 Spring Meeting, Strasbourg, France, 27.-30.05.2012, [Online-Edition: http://www.emrs-strasbourg.com/index.php?option=com_content&...],
[Conference or Workshop Item]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, pp. 105-114, 53, (5), [Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst],
[Article]

Wessely, Pia Juliane and Schwalke, Udo (2013):
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, pp. 133-137, 53, (1), [Online-Edition: http://dx.doi.org/10.1149/05301.0131ecst],
[Article]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q88-Q93, 2, (6), [Online-Edition: http://dx.doi.org/10.1149/2.002307jss],
[Article]

Keyn, Martin and Schwalke, Udo (2013):
Multi-CNTFETs for Power Device Applications: Investigation of CCVD Grown CNTs by Means of Atomic Force Microscopy.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527767],
[Article]

Wessely, Pia Juliane and Schwalke, Udo (2013):
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527769],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2013):
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, pp. 86-90, 81, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, pp. 258-265, 77, [Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258],
[Article]

Keyn, Martin and Wessely, Frank and Schwalke, Udo (2012):
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
In: Junior Euromat 2012, Lausanne, Switzerland, 23.-27.07.2012, [Online-Edition: http://www.dgm.de/tagungen/?tgnr=1178&edate=27.07.2012&lg=en...],
[Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
In: Graphene Week 2012, Delft, Netherlands, 04.-08.06.2012, [Online-Edition: http://www.graphene-week.eu/],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949],
[Article]

Keyn, Martin and Wessely, Pia Juliane and Wessely, Frank and Rispal, Lorraine and Palm, Johannes and Schwalke, Udo (2012):
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952],
[Article]

Schwalke, Udo (2012):
Nanoelectronics: From Silicon to Carbon.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Gammarth, Tunisia, 16.-18.05.2012, [Online-Edition: http://www.dtis-conference.net/Technical_Program.pdf],
[Conference or Workshop Item]

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Keyn, Martin and Rispal, Lorraine (2012):
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
In: 221th Meeting of the Electrochemical Society, Seattle, WA, USA, 06.-11.05.2012, [Online-Edition: http://link.aip.org/link/?ECA/1201/755],
[Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, pp. 23-30, 45, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3700449],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo and Riedinger, Bernadette (2012):
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, pp. 03D114-1, 30, (3), [Online-Edition: http://dx.doi.org/10.1116/1.4711128],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, pp. 91-96, 74, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Online-Edition: http://www.mrs.org/s12-program-ee/#tab4],
[Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Graphene 2012, Brussels, Belgium, 10.-13.04.2012, [Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, pp. 33-38, 70, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, pp. K31-K34, 15, (4), [Online-Edition: http://dx.doi.org/10.1149/2.019204esl],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, pp. 1-5, 41, (40), [Online-Edition: http://dx.doi.org/10.1149/1.3703508],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Beckmann, Karsten and Riedinger, Bernadette and Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, pp. 1132-1135, 44, (7-8), [Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022],
[Article]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, pp. 3393-3398, 88, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013],
[Article]

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Keyn, Martin and Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
In: 12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), pp. 263-266, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184],
[Article]

Ginsel, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2011):
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
In: ImageNano, Bilbao, Spanien, 11.-14.04.2011, [Online-Edition: http://www.imaginenano.com/],
[Conference or Workshop Item]

Ginsel, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2011):
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2011.5941438],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI), pp. 41-42, [Article]

Schwalke, Udo and Rispal, Lorraine (2010):
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
In: 41st IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 02.-04.12.2010, [Conference or Workshop Item]

Endres, Ralf and Gottlob, H. D. B. and Schmidt, M. and Schwendt, D. and Osten, H. J. and Schwalke, Udo (2010):
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, pp. 25-29, 33, (3), [Online-Edition: http://dx.doi.org/10.1149/1.3481588],
[Article]

Rispal, Lorraine and Ginsel, Pia Juliane and Schwalke, Udo (2010):
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene.
In: ECS Transactions, pp. 13-19, 33, (9), [Online-Edition: http://dx.doi.org/10.1149/1.3493679],
[Article]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, pp. 169-173, 33, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3483505],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2010):
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC), pp. 356-358, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754],
[Article]

Schwalke, Udo (2010):
Kohlenstoff: Die Zukunft der Nanoelektronik?
In: Inno.CNT-Jahreskongress, Marl, Deutschland, 20.01.2010, [Conference or Workshop Item]

Schwalke, Udo (2010):
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Conference or Workshop Item]

Endres, Ralf and Schwalke, Udo (2010):
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572],
[Article]

Schwalke, Udo (2010):
Kohlenstoff: Die Zukunft der Nanoelektronik?
In: ZVEI-Fachgruppensitzung "Halbleiter Bauelemente", Hanau, Deutschland, 24.02.2010, [Conference or Workshop Item]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Conference or Workshop Item]

Schwalke, Udo (2009):
Kohlenstoff-Nanoröhren als elektronische Bauteile für biomedizinische Sensor-Anwendungen.
In: 6. Nanotechnologieforum Hessen, Hanau, Deutschland, 26.11.2009, [Conference or Workshop Item]

Rispal, Lorraine and Schwalke, Udo (2009):
Carbon: The Future of Nanoelectronics.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414197],
[Article]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209],
[Article]

Wessely, Frank and Endres, Ralf and Schwalke, Udo (2009):
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414217],
[Article]

Rispal, Lorraine and Schwalke, Udo (2009):
Carbon Nanotube Memory Devices: Mass-Fabrication and Electrical Characterization.
In: 216th Meeting of The Electrochemical Society (ECS), Wien, Österreich, 04.-09.10.2009, [Online-Edition: http://ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&i...],
[Conference or Workshop Item]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, pp. 258-261, 27, (1), [Online-Edition: http://dx.doi.org/10.1116/1.3054350],
[Article]

Schwalke, Udo (2009):
Nano-Electronics: From Top-Down to Bottom-Up?!
In: 8th Symposium Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 22.-24.06.2009, [Conference or Workshop Item]

Schwalke, Udo (2009):
Yield, Reliability and Variability in the Nano-Era: Will Existing Approaches Survive?
In: 14th IEEE European Test Symposium, Sevilla, Spanien, 25.-29.05.2009, [Conference or Workshop Item]

Schwalke, Udo (2009):
Damscene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
In: DGM Arbeitskreis "Materialien für elektronische Anwendungen", 20.02.2009, Berlin, Deutschland, [Conference or Workshop Item]

Endres, Ralf and Wessely, Frank and Schwalke, Udo (2008):
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), pp. 544-547, [Online-Edition: http://www.stw.nl/NR/rdonlyres/678497B6-D48F-4F76-94AF-EB589...],
[Article]

Schwalke, Udo (2008):
Nanotechnology: The Power of Small.
In: 2nd International Conference on Signals, Circuits & Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2008.4746860],
[Article]

Rispal, Lorraine and Schwalke, Udo (2008):
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, pp. 1349-1352, 29, (12), [Online-Edition: http://dx.doi.org/10.1109/LED.2008.2005850],
[Article]

Schwalke, Udo and Rispal, Lorraine (2008):
Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices.
In: 214th Meeting of The Electrochemical Society (ECS), Honolulu, HI, USA, 12.-17.10.2008, [Online-Edition: http://ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&i...],
[Conference or Workshop Item]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Conference or Workshop Item]

Schwalke, Udo (2008):
Field-Effect Controlled Single-Walled Carbon Nanotube Devices for Biomedical Sensor Applications.
In: 3rd International Conference on Smart Materials, Structures & Systems (CIMTEC), Acireale, Italien, 08.-13.06.2008, [Conference or Workshop Item]

Rispal, Lorraine and Tschischke, T. and Yang, Hongyu and Schwalke, Udo (2008):
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
In: ECS Transactions, pp. 65-71, 13, (14), [Online-Edition: http://dx.doi.org/10.1149/1.2998532],
[Article]

Schwalke, Udo and Rispal, Lorraine (2008):
Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications.
In: ECS Transactions, pp. 39-45, 13, (22), [Online-Edition: http://dx.doi.org/10.1149/1.3005401],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, pp. 15-19, 85, (1), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

Wirbeleit, F. and Pedrero, V. and Thron, D. and Stephan, R. and Schwalke, Udo (2008):
Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon.
In: Material Research Society (MRS), San Francisco, CA, USA, 24.-28.03.2008, [Conference or Workshop Item]

Rispal, Lorraine and Schwalke, Udo (2008):
Structural and Electrical Characterization of Carbon Nanotube Field-Effect Transistors Fabricated by Novel Self-aligned Growth Method.
In: 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2008.4540244],
[Article]

Endres, Ralf and Schwalke, Udo (2008):
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC), pp. 486-492, [Article]

Schwalke, Udo (2008):
Damascene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
In: DPG Spring Meeting, Berlin, Deutschland, 25.-29.02.2008, [Conference or Workshop Item]

Schwalke, Udo (2008):
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomediccal Sensor Applications.
In: Conference Proceedings of Biodevices 2008, [Article]

Rispal, Lorraine and Tschischke, T. and Yang, Hongyu and Schwalke, Udo (2008):
Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-aligned Process and Influence on Device Transfer Characteristic Hysteresis.
In: Japanese Journal of Applied Physics, pp. 3287-3291, 47, (4), [Online-Edition: http://dx.doi.org/10.1143/JJAP.47.3287],
[Article]

Zaunert, Florian and Endres, Ralf and Schwalke, Udo (2007):
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007, pp. 488-491, [Online-Edition: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...],
[Article]

Endres, Ralf and Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT), pp. 421-426, [Online-Edition: http://elib1.ulb.tu-darmstadt.de/ieee/search/srchabstract.js...],
[Article]

Stefanov, Yordan and Schwalke, Udo
Li, Yuzhuo (ed.) (2007):
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization, Hoboken, NJ, USA, Wiley, [Book Section]

Schwalke, Udo (2007):
Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices.
In: ECS Transactions, pp. 301-315, 11, (3), [Online-Edition: http://dx.doi.org/10.1149/1.2778673],
[Article]

Hurley, P. K. and Pijolat, M. and Cherkaoui, K. and O'Connor, E. and O'Connell, D. and Negara, M. A. and Lemme, M. C. and Gottlob, D. B. and Schmidt, M. and Stegmaier, K. and Schwalke, Udo and Hall, S. and Buiu, O. and Engstrom, O. and Newcomb, S. B. (2007):
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, pp. 145-156, 11, (4), [Online-Edition: http://dx.doi.org/10.1149/1.2779556],
[Article]

Rispal, Lorraine and Hang, H. and Heller, Rudolf and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2007):
Self-Aligned Fabrication Process Based on Sacrificial Catalyst for Pd-Contacted Carbon Nanotube Field-Effect Transistors.
In: ECS Transactions, pp. 53-61, 11, (8), [Online-Edition: http://dx.doi.org/10.1149/1.2783302],
[Article]

Wessely, Frank and Rispal, Lorraine and Schwalke, Udo (2007):
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE), pp. 478-481, [Online-Edition: http://www.stw.nl/NR/rdonlyres/ADD2FB2C-3AD4-4D1E-BA0A-1EAEA...],
[Article]

Biethan, Jens-Peter and Kammler, Thorsten and Naumann, Andreas and Schwalke, Udo and Stephan, Rolf and Trui, Bernhard (2007):
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007, pp. 214-215, [Article]

Rispal, Lorraine and Yang, Hongyu and Heller, Rudolf and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2007):
Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors.
In: 2007 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 18.-21.09.2007, [Conference or Workshop Item]

Schwalke, Udo (2007):
Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy.
In: ECS Transactions, pp. 129-140, 10, (1), [Online-Edition: http://dx.doi.org/10.1149/1.2773983],
[Article]

Wessely, Frank and Ruland, Tino and Schwalke, Udo (2007):
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
In: European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Conference or Workshop Item]

Wessely, Frank and Ruland, Tino and Schwalke, Udo (2007):
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
In: European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Conference or Workshop Item]

Endres, Ralf and Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Rispal, Lorraine and Schwalke, Udo (2007):
Fabrication-Process for CNTFETs Based on Sacrificial Catalyst: Device Characterization and Conductive-AFM Measurements.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Schwalke, Udo (2007):
Nanoelectronics: From Top-Down to Bottom-Up.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, pp. 528-531, 47, (4-5), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2007.01.018],
[Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, pp. 78-85, 2, [Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
In: 37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 07.-09.12.2006, [Conference or Workshop Item]

Schwalke, Udo (2006):
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), [Article]

Rispal, Lorraine and Ruland, Tino and Stefanov, Yordan and Wessely, Frank and Schwalke, Udo (2006):
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, pp. 441-448, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356303],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, pp. 297-301, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356289],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Gottlob, H. D. B. and Echtermeyer, T. and Mollenhauer, T. and Schmidt, M. and Efavi, J. and Wahlbrink, T. and Lemme, L. M. and Kurz, H. and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo and Czernohorsky, M. and Bugiel, E. and Fissel, A. and Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics, [Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
In: 7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 25.-28.06.2006, [Conference or Workshop Item]

Rispal, Lorraine and Wessely, Frank and Stefanov, Yordan and Ruland, Tino and Schwalke, Udo (2006):
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
In: IEEE EDS Workshop on Advanced Electron Devices, Fraunhofer-Institut IMS, Duisburg, Deutschland, 13.-14.06.2006, [Conference or Workshop Item]

Rispal, Lorraine and Stefanov, Yordan and Wessely, Frank and Schwalke, Udo (2006):
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, pp. 3672-3679, 45, [Online-Edition: http://dx.doi.org/10.1143/JJAP.45.3672],
[Article]

Barreiro, A. and Selbmann, D. and Pichler, T. and Biedermann, K. and Gemming, T. and Rümmeli, M. H. and Schwalke, Udo and Büchner, B. (2006):
On the Effects of Solution and Reaction Parameters for the Aerosol-assisted CVD Growth of Long Carbon Nanotubes.
In: Applied Physics A, pp. 719-725, 82, (4), [Online-Edition: http://dx.doi.org/10.1007/s00339-005-3436-5],
[Article]

Marathe, Vaibhav G. and Stefanov, Yordan and Schwalke, Udo and DasGupta, Nandita (2006):
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, pp. 11-14, 504, (1-2), [Online-Edition: http://dx.doi.org/10.1016/j.tsf.2005.09.019],
[Article]

Stefanov, Yordan and Cilek, F. and Endres, Ralf and Schwalke, Udo (2005):
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
In: The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP), Seoul, Korea, 17.-19.11.2005, [Conference or Workshop Item]

Stefanov, Yordan and Singh, Ravneet and DasGupta, Nandita and Misra, Pankaj and Schwalke, Udo (2005):
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON), [Article]

Rispal, Lorraine and Stefanov, Yordan and Heller, Rudolf and Tzschöckel, Gerhard and Hess, Gisela and Haberle, Klaus and Schwalke, Udo (2005):
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
In: International Conference on Solid State Devices and Materials (SSDM), Kobe, Japan, 12.-15.09.2005, [Conference or Workshop Item]

Ruland, Tino and Endres, Ralf and Schwalke, Udo (2005):
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Rispal, Lorraine and Schwalke, Udo (2005):
Carbon Nanotube Devices Integrated in the CMOS Process Using Chemical Vapour Deposition.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Ruland, Tino and Endres, Ralf and Schwalke, Udo (2005):
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Rispal, Lorraine and Stefanov, Yordan and Schwalke, Udo (2005):
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
In: Nanoscale III, Santa Barbara, CA, USA, 13.-16.08.2005, [Conference or Workshop Item]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Stefanov, Yordan and Komaragiri, Rama and Schwalke, Udo (2005):
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD), p. 167, [Article]

Schwalke, Udo (2005):
Gate Dielectrics: Process Integration Issues and Electrical Properties.
In: Journal of Telecommunications and Technology, p. 7, 1, [Article]

Schwalke, Udo and Stefanov, Yordan (2005):
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, pp. 790-793, 45, (5-6), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2004.11.047],
[Article]

Stefanov, Yordan and Ruland, Tino and Schwalke, Udo (2004):
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004, [Article]

Komaragiri, Rama Subrahmanyam and Zaunert, Florian and Schwalke, Udo (2004):
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
In: 11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Niederlande, 24.-25.11.2004, [Conference or Workshop Item]

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Schwalke, Udo (2004):
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, [Article]

Ruland, Tino and Stefanov, Yordan and Rispal, Lorraine and Schwalke, Udo (2004):
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860), [Article]

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Schwalke, Udo (2004):
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts, p. 97, [Article]

Stefanov, Yordan and Hess, Gisela and Tzschöckel, Gerhard and Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]

Schwalke, Udo and Stefanov, Yordan (2004):
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
Elsevier, In: 13th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Irland, 28.-30.06.2004, [Conference or Workshop Item]

Kerber, Andreas and Cartier, E. and Degraeve, R. and Roussel, Ph. and Pantisano, L. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2004):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, pp. 267-272, 72, (1-4), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2004.01.002],
[Article]

Nordmann, Alfred and Schwalke, Udo (2004):
Die technische und gesellschaftliche Einbettung der Nanotechnik.
In: Thema Forschung, pp. 44-50, 2, ISSN 1434-7768,
[Article]

Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, pp. 6627-6630, 94, (10), [Online-Edition: http://dx.doi.org/10.1063/1.1621718],
[Article]

Schwalke, Udo and Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Ruland, Tino (2003):
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC), pp. 243-246, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2003.1256859],
[Article]

Kerber, Andreas and Cartier, E. and Degraeve, R. and Roussel, Ph. and Pantisano, L. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, pp. 1261-1269, 50, (5), [Online-Edition: http://dx.doi.org/10.1109/TED.2003.813486],
[Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Rosmeulen, M. and Degraeve, R. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45, [Online-Edition: http://dx.doi.org/10.1109/RELPHY.2003.1197718],
[Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kauerauf, T. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, pp. 87-89, 24, (2), [Online-Edition: http://dx.doi.org/10.1109/LED.2003.808844],
[Article]

Komaragiri, Rama Subrahmanyam and Schwalke, Udo and Stefanov, Yordan and Ruland, Tino (2003):
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), [Article]

Schwalke, Udo (2003):
Towards Nano-CMOS Technology: Trends and Challenges.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), pp. 439-443, [Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2002):
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
In: IEEE Semiconductor Interface Specialist Conference, San Diego, CA, USA, 05.-07.12.2002, [Conference or Workshop Item]

Schwalke, Udo and Boye, K. and Haberle, Klaus and Heller, Rudolf and Hess, Gisela and Müller, Gudrun and Ruland, Tino and Tzschöckel, Gerhard and Osten, H. J. and Fissel, A. and Müssig, H.-J. (2002):
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC), pp. 407-410, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2002.194954],
[Article]

Schwalke, Udo (2001):
Progress in Device Isolation Technology.
In: Microelectronis Reliability, pp. 483-490, 41, (4), [Online-Edition: http://dx.doi.org/10.1016/S0026-2714(00)00259-6],
[Article]

Schwalke, Udo and Pölzl, Martin and Sekinger, Thomas and Kerber, Martin (2001):
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
In: Microelectronics Reliability, pp. 1007-1010, 41, (7), [Online-Edition: http://dx.doi.org/10.1016/S0026-2714(01)00058-0],
[Article]

This list was generated on Tue Oct 15 00:32:29 2019 CEST.